Method of producing semiconductor device

ABSTRACT

A method of producing a semiconductor device including steps (A) and (B). Step (A) is preparing a semiconductor epitaxial wafer including a plurality of device regions, each including a body region contacting a semiconductor layer. Step (B) is forming a channel layer contacting at least a part of the body region by epitaxial growth of a semiconductor on a surface of the semiconductor layer. The channel layer contains an impurity at a concentration ranging from 1×1018 cm−3 to 1×1019 cm−3, inclusive, and has a thickness ranging from 10 nm to 100 nm, inclusive. In the step (B), a condition for the epitaxial growth is controlled so that, in a plane parallel to the main surface of the semiconductor wafer, a thickness distribution in the channel layer and a concentration distribution of the impurity in the channel layer are negatively correlated to each other.

CROSS-REFERENCE OF RELATED APPLICATIONS

This application is the Divisional application of U.S. patentapplication Ser. No. 15/896,490, filed Feb. 14, 2018, which in turnclaims the benefit of Japanese Application No. 2017-041696, filed onMar. 6, 2017, the entire disclosures of which Applications areincorporated by reference herein.

BACKGROUND 1. Technical Field

The present disclosure relates to a semiconductor epitaxial wafer, asemiconductor device, and a method of producing a semiconductor device.

2. Description of the Related Art

Silicon carbide (SiC) is a semiconductor material having a greaterbandgap and a greater degree of hardness than those of silicon (Si). SiCis used for power devices such as switching devices and rectifierdevices. A power device made of SiC can advantageously reduce a powerloss, for example, compared with a power device made of Si.

Typical semiconductor devices made of SiC includemetal-insulator-semiconductor field-effect transistors (MISFETs) andSchottky-barrier diodes (SBDs). Metal-oxide-semiconductor field-effecttransistor (MOSFET) is one kind of MISFETs.

A MISFET made of SiC (hereinafter referred to as “SiC-MISFET”) is formedby using a silicon carbide epitaxial layer formed on a main surface of asilicon carbide wafer. Normally, a plurality of silicon carbidesemiconductor devices (chips) are manufactured from a single siliconcarbide wafer. In each of the silicon carbide semiconductor devices, asilicon carbide epitaxial layer includes a drift layer. A siliconcarbide layer acting as a channel layer may be further disposed on asilicon carbide epitaxial layer.

In the specification, the term “silicon carbide wafer” denotes asubstrate obtained by cutting, into a predetermined size, and polishinga piece of single crystal SiC produced with a modified Lely method or asublimation method, for example. The term “silicon carbide epitaxialwafer” denotes a substrate in which a silicon carbide semiconductorlayer, such as a silicon carbide epitaxial layer, is formed on a siliconcarbide wafer. The term “silicon carbide epitaxial wafer” includes asubstrate in which a plurality of silicon carbide semiconductor devices(SiC-MISFETs) are or only a part of its device structure is formed on asilicon carbide wafer formed with a silicon carbide epitaxial layer. Thesilicon carbide epitaxial wafer on which a plurality of silicon carbidesemiconductor devices are formed is then cut into a predetermined chipsize (dicing) so that the plurality of silicon carbide semiconductordevices are separated from each other. In the specification, the genericterm “semiconductor wafer” denotes a semiconductor wafer made of SiC orgallium nitride (GaN), for example, while the generic term“semiconductor epitaxial wafer” denotes a substrate in which asemiconductor layer made of SiC or GaN, for example, is formed on thesemiconductor wafer. A semiconductor epitaxial wafer includes asubstrate on which a plurality of semiconductor devices are or only apart of its device structure is formed.

A silicon carbide layer having a relatively higher impurityconcentration may sometimes be used as a channel layer of a SiC-MISFET.This can reduce a resistance (channel resistance) component when acurrent flows into the channel layer so that an ON-resistance Ron in theSiC-MISFET can be reduced.

By increasing impurity concentration in the channel layer, when athickness of the channel layer is appropriate, the SiC-MISFET canfunction, in a transistor OFF mode, as a diode that allows a current toflow from a source electrode to a drain electrode via the channel layer.Such a diode is referred to as a “channel diode.” In the specification,a direction from the drain electrode to the source electrode is referredto as “forward direction,” while a direction from the source electrodeto the drain electrode is referred to as “reverse direction.” Adirection toward which a channel diode allows a current to flow is the“reverse direction.” An absolute value |Vf0| of a rising voltage of thechannel diode is set smaller than an absolute value |Vf| of a risingvoltage of a diode (hereinafter referred to as “body diode”) that uses a“pn” junction present in the SiC-MISFET. Unexamined Japanese PatentPublication No. 2012-104856 and WO No. 2010/125819 A, for example,disclose SiC-MISFETs incorporating a channel diode.

When a SiC-MISFET is used as a switching device for a power converter,for example, the SiC-MISFET may allow a reflux current to flow into thepower converter when the SiC-MISFET is turned off. In an ordinaryinverter circuit, an external reflux diode, such as an SBD, is coupledin anti-parallel to a SiC-MISFET so as to use the reflux diode as a pathfor a reflux current. On the other hand, in a SiC-MISFET incorporating achannel diode, no external reflux diode is required, beneficiallyreducing a number of parts.

SUMMARY

A method of producing a semiconductor device according to a first aspectof the present disclosure includes the following steps (A) and (B). Inthe step (A), a semiconductor epitaxial wafer which includes asemiconductor wafer, and a semiconductor layer disposed on a mainsurface of the semiconductor wafer is prepared. The semiconductor layercontains a first conductivity type impurity. The semiconductor epitaxialwafer includes a plurality of device regions, each of which includes abody region of a second conductivity type in contact with thesemiconductor layer, and a source region of the first conductivity typein contact with the body region. In the step (B), a channel layer whichis in contact with at least a part of the body region by epitaxialgrowth of a semiconductor on a surface of the semiconductor layer isformed. The channel layer contains the first conductivity type impurityat a concentration ranging from 1×10¹⁸ cm⁻³ to 1×10¹⁹ cm⁻³, inclusive,and has a thickness ranging from 10 nm to 100 nm, inclusive. And, in thestep (B), a condition for the epitaxial growth is controlled so that, ina plane parallel to the main surface of the semiconductor wafer, athickness distribution in the channel layer and a concentrationdistribution of the first conductivity type impurity in the channellayer are negatively correlated to each other.

A method of producing a semiconductor device according to a secondaspect of the present disclosure includes the following steps (A), (B),and (C). In the step (A), a semiconductor epitaxial wafer which includesa semiconductor wafer, and a semiconductor layer disposed on a mainsurface of the semiconductor wafer is prepared. The semiconductor layercontains a first conductivity type impurity. The semiconductor epitaxialwafer includes a plurality of device regions, each of which includes abody region of a second conductivity type in contact with thesemiconductor layer, and a source region of the first conductivity typein contact with the body region. In the step (B), a channel layer whichis in contact with at least a part of the body region by epitaxialgrowth of a semiconductor on a surface of the semiconductor layer isformed. In the step (C), a gate insulation film on the channel layer isformed. The channel layer contains the first conductivity type impurityat a concentration ranging from 1×10¹⁸ cm⁻³ to 1×10¹⁹ cm⁻³, inclusive,and has a thickness ranging from 10 nm to 100 nm, inclusive. In thesteps of (B) and (C), a condition for the epitaxial growth and acondition for forming the gate insulation film are controlled so that,in a plane parallel to the main surface of the semiconductor wafer, athickness distribution in the channel layer and a thickness distributionin the gate insulation film are positively correlated to each other.

With the above described aspects of the present disclosure, asemiconductor epitaxial wafer or a semiconductor device, which iscapable of reducing variations in device characteristics in a planeparallel to a main surface of a semiconductor wafer, can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view illustrating a silicon carbide epitaxial waferaccording to an exemplary embodiment;

FIG. 2 is a plan view illustrating a silicon carbide semiconductordevice;

FIG. 3A is a cross-sectional view illustrating unit cells in the siliconcarbide semiconductor device;

FIG. 3B is an enlarged cross-sectional view of an example of a channellayer;

FIG. 4A is a graph illustrating a thickness distribution and an impurityconcentration distribution in a channel layer, in a cross-section thatpasses through a center of the silicon carbide epitaxial wafer;

FIG. 4B is a graph illustrating a thickness distribution and an impurityconcentration distribution in the channel layer, in a cross-section ofthe silicon carbide semiconductor device;

FIG. 5A is a graph illustrating a thickness distribution in the channellayer and a thickness distribution in a gate insulation film, in across-section that passes through the center of the silicon carbideepitaxial wafer;

FIG. 5B is a graph illustrating a thickness distribution in the channellayer and a thickness distribution in the gate insulation film, in across-section of the silicon carbide semiconductor device;

FIG. 6A is a graph illustrating the thickness distribution in thechannel layer, an impurity concentration distribution in the channellayer, and the thickness distribution in the gate insulation film, in across-section that passes through the center of the silicon carbideepitaxial wafer;

FIG. 6B a graph illustrating the thickness distribution in the channellayer, an impurity concentration distribution in the channel layer, andthe thickness distribution in the gate insulation film, in across-section of the silicon carbide semiconductor device;

FIG. 7A is a cross-sectional view for explaining a method of producingthe silicon carbide semiconductor devices;

FIG. 7B is a cross-sectional view for explaining the method of producingthe silicon carbide semiconductor devices;

FIG. 7C is a cross-sectional view for explaining the method of producingthe silicon carbide semiconductor devices;

FIG. 7D is a cross-sectional view for explaining the method of producingthe silicon carbide semiconductor devices;

FIG. 7E is a cross-sectional view for explaining the method of producingthe silicon carbide semiconductor devices;

FIG. 7F is a cross-sectional view for explaining the method of producingthe silicon carbide semiconductor devices;

FIG. 8A is a graph showing a result of measurement on the thicknessdistribution and the impurity concentration distribution in the channellayer according to a comparative example;

FIG. 8B is a graph showing gate threshold voltage vary and ON-resistancevary in a plurality of MISFETs according to the comparative example;

FIG. 9A is a graph showing a result of measurement on the thicknessdistribution and the impurity concentration distribution in the channellayer according to an example; and

FIG. 9B is a graph showing variations of gate threshold voltage andON-resistance in a plurality of MISFETs according to the example.

DETAILED DESCRIPTION OF EMBODIMENT

To increase a yield rate in production of semiconductor devices, such asSiC-MISFETs, variations of device characteristics including gatethreshold voltage Vth and ON-resistance Ron are required to be reducedin a plane parallel to a main surface of a semiconductor wafer(hereinafter referred to as “within a surface of a semiconductorwafer”), i.e., it is required to be reduced among a plurality of chipsor within a chip formed on the semiconductor wafer. Details will bedescribed later.

An exemplary embodiment of the present disclosure provides asemiconductor epitaxial wafer or a semiconductor device, which iscapable of reducing variations in device characteristics in a planeparallel to a main surface of the semiconductor wafer.

The following description is a knowledge base for the presentdisclosure.

As described above, a SiC-MISFET can function as a channel diode duringa transistor OFF state by controlling an impurity concentration (carrierconcentration) and a thickness of a channel layer, for example. At thistime, depending on a thickness of the channel layer, the impurityconcentration in the channel layer is set relatively higher (e.g.,1×10¹⁸ cm⁻³ or higher). When an impurity concentration in a channellayer is increased, however, gate threshold voltage Vth of a SiC-MISFETbecomes susceptible to variations within a surface, such as a thicknessof and the impurity concentration in the channel layer, for example. Asa result, device characteristics including gate threshold voltage Vthand ON-resistance Ron would be likely to vary, across a plurality ofchips or within a chip formed on a surface of a silicon carbide wafer.According to a result of an experiment performed on a 3-inch siliconcarbide wafer, described later, when a thickness of a channel layervaries within a range of ±5% and an impurity concentration in thechannel layer varies within a range of ±20%, gate threshold voltage Vthvaries within a range of ±0.6 V and ON-resistance Ron varies within arange of ±6 mΩ.

Conventionally, to make device characteristics even as much as possiblewithin a surface, conditions for forming a channel layer have beenselected so as to reduce variations within a surface of a channel layer.According to an investigation performed by the inventor of the presentdisclosure, however, there is a limit in reducing variations within asurface of a channel layer depending on a method and a condition forforming a channel layer. In a channel layer containing an impurity at ahigher concentration, in particular, it is difficult to keep an impurityconcentration within a range of a several % within a surface of asilicon carbide wafer. When a silicon carbide wafer having a greaterdiameter (e.g., six inches and eight inches) will be required in thefuture, it becomes further difficult to reduce variations within asurface of a channel layer.

Even in a MISFET made of a semiconductor material other than siliconcarbide, increasing an impurity concentration in a channel layer canalso lead to variations of the channel layer within a surface of asemiconductor wafer, as the same as described above.

To solve the above described problems, the inventor of the presentdisclosure has investigated a method that can reduce variations indevice characteristic even if a variation is present within a surface ofa channel layer. As a result, the inventor of the present disclosure hasfound that variations in device characteristics can be reduced byallowing a channel layer to have a predetermined thickness distributionand a predetermined impurity concentration distribution, and byutilizing the distributions. The inventor of the present disclosure hasalso found that variations in device characteristics can be reduced byutilizing a thickness distribution in a channel layer and a thicknessdistribution in a gate insulation film. According to the exemplaryembodiment of the present disclosure, an amount of variation in gatethreshold voltage Vth due to a thickness distribution in a channel layeris compensated with an amount of variation in gate threshold voltage Vthdue to an impurity concentration distribution in the channel layer, forexample. A semiconductor epitaxial wafer or a semiconductor device withreduced variations in device characteristics within a surface cantherefore be provided.

Abstract of one aspect of the present disclosure is as follows.

In an exemplary embodiment according to the first aspect of the presentdisclosure, a semiconductor epitaxial wafer includes a semiconductorwafer, and a semiconductor layer of a first conductivity type disposedon a main surface of the semiconductor wafer. The semiconductorepitaxial wafer includes a plurality of device regions. The plurality ofdevice regions each includes a body region of a second conductivitytype, a source region of the first conductivity type, and a channellayer constituted by a semiconductor. The body region is in contact withthe semiconductor layer. The source region is in contact with the bodyregion. The channel layer is disposed on the semiconductor layer so asto be in contact with at least a part of the body region. The channellayer contains a first conductivity type impurity at a concentrationranging from 1×10¹⁸ cm⁻³ to 1×10¹⁹ cm⁻³, inclusive, and has a thicknessranging from 10 nm to 100 nm, inclusive. In a plane parallel to the mainsurface of the semiconductor wafer, a thickness distribution in thechannel layer and a concentration distribution of the first conductivitytype impurity in the channel layer are negatively correlated to eachother.

When thicknesses of the channel layer at two points “a” and “b”optionally defined in the plane parallel to the main surface of thesemiconductor wafer are represented by Da and Db, respectively, whileconcentrations of the first conductivity type impurity in the channellayer at the two points “a” and “b” are represented by Ca and Cb,respectively, an inequality of Ca<Cb may be satisfied when an inequalityof Da>Db is satisfied, or an inequality of Ca>Cb may be satisfied whenan inequality of Da<Db is satisfied.

The plurality of device regions each further includes a gate insulationfilm disposed on the channel layer, and a gate electrode disposed on thegate insulation film, for example. In the plane parallel to the mainsurface of the semiconductor wafer, a thickness distribution in thechannel layer and a thickness distribution in the gate insulation filmmay be positively correlated to each other.

In the plane parallel to the semiconductor wafer, a difference between amaximum value and a minimum value in the thickness distribution in thechannel layer may range from 2 nm to 20 nm, inclusive, for example,while a difference between a maximum value and a minimum value in theconcentration distribution of the first conductivity type impurity inthe channel layer may range from 2×10¹⁷ cm⁻³ to 2×10¹⁸ cm⁻³, inclusive,for example.

For a concentration of the first conductivity type impurity in thechannel layer, a concentration in a center portion of the semiconductorwafer may be lower than a concentration in a peripheral portion of thesemiconductor wafer, for example. For a thickness of the channel layer,a thickness in the center portion of the semiconductor wafer may begreater than a thickness in the peripheral portion of the semiconductorwafer, for example.

In an exemplary embodiment according to the second aspect of the presentdisclosure, a semiconductor epitaxial wafer includes a semiconductorwafer, and a semiconductor layer of a first conductivity type disposedon a main surface of the semiconductor wafer. The semiconductorepitaxial wafer includes a plurality of device regions. The plurality ofdevice regions each includes a body region of a second conductivitytype, a source region of the first conductivity type, a channel layerconstituted by a semiconductor, a gate insulation film, and a gateelectrode. The body region is in contact with the semiconductor layer.The source region is in contact with the body region. The channel layeris disposed on the semiconductor layer so as to be in contact with atleast a part of the body region. The gate insulation film is disposed onthe channel layer. The gate electrode is disposed on the gate insulationfilm. The channel layer contains a first conductivity type impurity at aconcentration ranging from 1×10¹⁸ cm⁻³ to 1×10¹⁹ cm⁻³, inclusive, andhas a thickness ranging from 10 nm to 100 nm, inclusive. In a planeparallel to the semiconductor wafer, a thickness distribution in thechannel layer and a thickness distribution in the gate insulation filmare positively correlated to each other.

When thicknesses of the channel layer at two points “a” and “b”optionally defined in the plane parallel to the main surface of thesemiconductor wafer are represented by Da and Db, respectively, whilethicknesses of the gate insulation film at the two points “a” and “b”are represented by Ta and Tb, respectively, an inequality of Ta>Tb maybe satisfied when an inequality of Da>Db is satisfied, or an inequalityof Ta<Tb may be satisfied when an inequality of Da<Db is satisfied. Thechannel layer and the gate insulation film may both have a greaterthickness in a center portion of the semiconductor wafer than athickness in a peripheral portion of the semiconductor wafer.

The gate insulation film is a thermal oxide film, for example.

The semiconductor wafer is a silicon carbide wafer, for example, thesemiconductor layer is a silicon carbide semiconductor layer, forexample, and the channel layer is constituted by a silicon carbidesemiconductor, for example.

In an exemplary embodiment according to a third aspect of the presentdisclosure, a semiconductor device includes a semiconductor substrate, asemiconductor layer of a first conductivity type, a body region of asecond conductivity type, a source region of the first conductivitytype, and a channel layer constituted by a semiconductor. Thesemiconductor layer is disposed on a main surface of the semiconductorsubstrate. The body region is in contact with the semiconductor layer.The source region is in contact with the body region. The channel layeris disposed on the semiconductor layer so as to be in contact with atleast a part of the body region. The channel layer contains a firstconductivity type impurity at a concentration ranging from 1×10¹⁸ cm⁻³to 1×10¹⁹ cm⁻³, inclusive, and has a thickness ranging from 10 nm to 100nm, inclusive. In a plane parallel to the main surface of thesemiconductor substrate, a thickness distribution in the channel layerand a concentration distribution of the first conductivity type impurityin the channel layer are negatively correlated to each other.

The above described semiconductor device further includes a gateinsulation film disposed on the channel layer, and a gate electrodedisposed on the gate insulation film, for example. In the plane parallelto the main surface of the semiconductor substrate, the thicknessdistribution in the channel layer and a thickness distribution in thegate insulation film may be positively correlated to each other.

In the plane parallel to the main surface of the semiconductorsubstrate, a difference between a maximum value and a minimum value inthe thickness distribution in the channel layer may range from 1 nm to 5nm, inclusive, for example, while a difference between a maximum valueand a minimum value in the concentration distribution of the firstconductivity type impurity in the channel layer may range from 1×10¹⁷cm⁻³ to 1×10¹⁸ cm⁻³, inclusive, for example.

In the plane parallel to the main surface of the semiconductorsubstrate, a difference between a maximum value and a minimum value inthe thickness distribution in the channel layer may range from 1 nm to 2nm, inclusive, for example, while a difference between a maximum valueand a minimum value in the concentration distribution of the firstconductivity type impurity in the channel layer may range from 1×10¹⁷cm⁻³ to 2×10¹⁷ cm⁻³, inclusive, for example.

In an exemplary embodiment according to a fourth aspect of the presentdisclosure, a semiconductor device includes a semiconductor substrate, asemiconductor layer of a first conductivity type, a body region of asecond conductivity type, a source region of the first conductivitytype, and a channel layer constituted by a semiconductor, a gateinsulation film, and a gate electrode. The semiconductor layer isdisposed on a main surface of the semiconductor substrate. The bodyregion is in contact with the semiconductor layer. The source region isin contact with the body region. The channel layer is disposed on thesemiconductor layer so as to be in contact with at least a part of thebody region. The gate insulation film is disposed on the channel layer.The gate electrode is disposed on the gate insulation film. The channellayer contains a first conductivity type impurity at a concentrationranging from 1×10¹⁸ cm⁻³ to 1×10¹⁹ cm⁻³, inclusive, and has a thicknessranging from 10 nm to 100 nm, inclusive. In a plane parallel to the mainsurface of the semiconductor substrate, a thickness distribution in thechannel layer and a thickness distribution in the gate insulation filmare positively correlated to each other.

The semiconductor substrate is a silicon carbide substrate, for example,the semiconductor layer is a silicon carbide semiconductor layer, forexample, and the channel layer is a silicon carbide semiconductor, forexample.

In an exemplary embodiment according to a fifth aspect of the presentdisclosure, a method of producing semiconductor devices includesperforming steps (A) and (B). In step (A), a semiconductor epitaxialwafer is prepared. The semiconductor epitaxial wafer includes asemiconductor wafer, and a semiconductor layer. The semiconductor layeris disposed on a main surface of the semiconductor wafer. Thesemiconductor layer contains a first conductivity type impurity. Thesemiconductor epitaxial wafer further includes a plurality of deviceregions. The plurality of device regions each includes a body region ofa second conductivity type in contact with the semiconductor layer, anda source region of the first conductivity type in contact with the bodyregion. In step (B), a channel layer is formed so as to be in contactwith at least a part of the body region by epitaxial growth of asemiconductor on a surface of the semiconductor layer. The channel layercontains the first conductivity type impurity at a concentration rangingfrom 1×10¹⁸ cm⁻³ to 1×10¹⁹ cm⁻³, inclusive, and has a thickness rangingfrom 10 nm to 100 nm, inclusive. In step (B), a condition for theepitaxial growth is controlled so that, in a plane parallel to the mainsurface of the semiconductor wafer, a thickness distribution in thechannel layer and a concentration distribution of the first conductivitytype impurity in the channel layer are negatively correlated to eachother.

The above described production method further includes step (C) in whicha gate insulation film is formed on the channel layer, for example. Insteps (B) and (C), a condition for the epitaxial growth and a conditionfor forming the gate insulation film may be controlled so that, in theplane parallel to the main surface of the semiconductor wafer, thethickness distribution in the channel layer and a thickness distributionin the gate insulation film are positively correlated to each other.

In an exemplary embodiment according to a sixth aspect of the presentdisclosure, a method of producing semiconductor devices includesperforming steps (A), (B), and (C). In step (A), a semiconductorepitaxial wafer is prepared. The semiconductor epitaxial wafer includesa semiconductor wafer, and a semiconductor layer. The semiconductorlayer is disposed on a main surface of the semiconductor wafer. Thesemiconductor layer contains a first conductivity type impurity. Thesemiconductor epitaxial wafer further includes a plurality of deviceregions. The plurality of device regions each includes a body region ofa second conductivity type in contact with the semiconductor layer, anda source region of the first conductivity type in contact with the bodyregion. In step (B), a channel layer is formed so as to be in contactwith at least a part of the body region by epitaxial growth of asemiconductor on a surface of the semiconductor layer. In step (C), agate insulation film is formed on the channel layer. The channel layercontains the first conductivity type impurity at a concentration rangingfrom 1×10¹⁸ cm⁻³ to 1×10¹⁹ cm⁻³, inclusive, and has a thickness rangingfrom 10 nm to 100 nm, inclusive. In steps (B) and (C), a condition forthe epitaxial growth and a condition for forming the gate insulationfilm are controlled so that, in a plane parallel to the main surface ofthe semiconductor wafer, a thickness distribution in the channel layerand a thickness distribution in the gate insulation film are positivelycorrelated to each other.

The semiconductor wafer is a silicon carbide wafer, for example, thesemiconductor layer is a silicon carbide semiconductor layer, forexample, and the channel layer is constituted by a silicon carbidesemiconductor, for example.

First Exemplary Embodiment

A semiconductor epitaxial wafer and a semiconductor device according toa first exemplary embodiment will now be described herein with referenceto the accompanying drawings, as well as with reference to a siliconcarbide epitaxial wafer and a silicon carbide semiconductor device(MISFET) as examples. The MISFET described herein, as an example, has ann-type conductivity type as a first conductivity type and a p-typeconductivity type as a second conductivity type. A silicon carbidesemiconductor device according to the exemplary embodiment may be aMISFET having a p-type conductivity type as a first conductivity typeand an n-type conductivity type as a second conductivity type.

FIG. 1 is a plan view illustrating silicon carbide epitaxial wafer 300according to the exemplary embodiment. Silicon carbide epitaxial wafer300 includes first conductivity type silicon carbide wafer 301 and asilicon carbide semiconductor layer (not shown) disposed on siliconcarbide wafer 301. The silicon carbide semiconductor layer may be anepitaxial layer. Silicon carbide wafer 301 may have a diameter of threeinches or more, for example. Silicon carbide epitaxial wafer 300includes a plurality of device regions Rc that are arranged in a twodimension manner. On each of device regions Rc, silicon carbidesemiconductor device 200 is wholly or partially formed. When siliconcarbide semiconductor device 200 is only partially formed, at least achannel layer constituted by a silicon carbide semiconductor may beformed.

FIG. 2 is a plan view illustrating silicon carbide semiconductor device200. Silicon carbide semiconductor device 200 includes a plurality ofunit cells (not shown) arranged in a two dimension manner. On siliconcarbide semiconductor device 200, i.e., on a main surface of siliconcarbide wafer 301, source pad 201 and gate pad 202 are provided over theplurality of unit cells. Source pad 201 and gate pad 202 are insulatedfrom each other. In the specification, a region onto which a unit cellis to be formed in silicon carbide semiconductor device 200 is sometimesreferred to as “unit cell forming region Ru.”

FIG. 3A is a cross-sectional view illustrating two unit cells 100 insilicon carbide semiconductor device 200.

Each of unit cells 100 includes first conductivity type silicon carbidesemiconductor substrate (hereinafter simply referred to as “siliconcarbide substrate”) 101, and silicon carbide epitaxial layer (driftlayer) 110 disposed on a main surface of silicon carbide substrate 101.

Silicon carbide substrate 101 is a part of silicon carbide wafer 301.Silicon carbide substrate 101 is an n⁺ substrate (n⁺ SiC substrate), forexample.

On silicon carbide epitaxial layer 110, second conductivity type bodyregion (well region) 103 is disposed. In silicon carbide epitaxial layer110, a region in which body region 103 is not disposed is firstconductivity type drift region 102. In a surface portion of drift region102, region 120 lying between two adjacent body regions 103 functions asa junction field effect transistor (JFET) region. In the exemplaryembodiment, drift region 102 is n⁻-type, while body region 103 isp-type. An impurity concentration in drift region 102 and a thickness ofdrift region 102 are appropriately changed in accordance with awithstand voltage required for a semiconductor device.

In the exemplary embodiment, the first conductivity type is n-type,while the second conductivity type is p-type. However, n-type and p-typemay be reversed from each other. The attached superscript “+” or “−”,such as a symbol of “n⁺” or “n⁻”, represents a relative concentration ofa dopant. The symbol “n⁺” indicates that an n-type impurityconcentration is higher than an n-type impurity concentration indicatedby a symbol “n”, while the symbol “n⁻” indicates that an n-type impurityconcentration is lower than an n-type impurity concentration indicatedby the symbol “n”.

In body region 103, first conductivity type (n⁺-type in here) sourceregion 104 is disposed. In body region 103, second conductivity type(p⁺-type in here) contact region 105 is further disposed. Contact region105 is formed to reduce a contact resistance between body region 103 andsource electrode 109. Contact region 105 may not be formed. In thiscase, a part of body region 103 is configured to be in direct contactwith source electrode 109.

On source region 104, source electrode 109 is provided. Source electrode109 electrically is in contact with both n⁺-type source region 104 andp⁺-type contact region 105. In the illustrated example, source electrode109 is in contact with channel layer 106. However, source electrode 109may not be in contact with channel layer 106.

On silicon carbide epitaxial layer 110, channel layer 106 is formed soas to be in contact with body region 103. Channel layer 106 is mainlymade of a silicon carbide semiconductor, and contains a firstconductivity type impurity. Channel layer 106 is formed so as to connectbetween source region 104 and JFET region 120. Channel layer 106 isformed through epitaxial growth on silicon carbide epitaxial layer 110,for example. In channel layer 106, a portion that lies between bodyregion 103 and gate electrode 108, which is in contact with body region103, functions as a channel region.

Gate insulation film 107 is disposed on channel layer 106. A thicknessof gate insulation film 107 is appropriately selected so as to conformto a voltage to be applied to gate electrode 108. Gate electrode 108 isprovided on gate insulation film 107. Gate electrode 108 is disposed soas to cover at least a portion, which lies between JFET region 120 andsource region 104, of a surface of body region 103. A plurality of unitcells 100 are electrically connected with each other by gate electrode108 integrally formed, for example. Gate electrode 108 is electricallyconnected to gate pad 202 illustrated in FIG. 2. Although not shown inthe drawings, a source wiring is provided on source electrode 109. Withthe source wiring provided on source electrode 109, the plurality ofunit cells 100 are electrically connected with each other. The sourcewiring is electrically connected to source pad 201 illustrated in FIG.2. On the other hand, drain electrode 114 is disposed on a back surfaceof silicon carbide substrate 101.

In silicon carbide semiconductor device 200, when an inequality ofVgs≥Vth is satisfied wherein a potential of gate electrode 108 relativeto a potential of source electrode 109 is represented by Vgs and a gatethreshold voltage is represented by Vth, a current flows in the forwarddirection (transistor ON mode). In here, an ON-current flows along adirection indicated by arrow 90 from drain electrode 114, via channellayer 106, to source electrode 109. On the other hand, when aninequality of 0(V)≤Vgs<Vth is satisfied, no current flows in the forwarddirection (transistor OFF mode). In the transistor OFF mode, a functionof a channel diode is achieved. The channel diode allows a current toflow in the reverse direction when an inequality of Vds<0 (V) issatisfied. In here, the channel diode allows a current to flow along adirection indicated by arrow 91 from source electrode 109, via channellayer 106, to drain electrode 114.

<Relationship Between Thickness Distribution in Channel Layer 106 andImpurity Concentration Distribution in Channel Layer 106>

In the exemplary embodiment, within a surface of silicon carbide wafer301 or within a surface of silicon carbide substrate 101 in siliconcarbide semiconductor device 200, a thickness distribution in channellayer 106 and a concentration distribution of the first conductivitytype impurity in channel layer 106 are negatively correlated to eachother. The term “negatively correlated to each other” herein denotes acase in which, defining two points “a” and “b” at which channel layer106 has different thicknesses in a plane parallel to silicon carbidewafer 301 or silicon carbide substrate 101, an equality of Ca<Cb issatisfied when an equality of Da>Db is satisfied or an equality of Ca>Cbis satisfied when an equality of Da<Db is satisfied, wherein thethicknesses of channel layer 106 at points “a” and “b” are respectivelyrepresented by Da and Db and concentrations of the first conductivitytype impurity in channel layer 106 are respectively represented by Caand Cb, for example.

When channel layer 106 has a multilayered structure, a thicknessdistribution in whole channel layer 106 and an impurity concentrationdistribution in a layer with a highest impurity concentration (highlyconcentrated impurity layer) in channel layer 106 may be negativelycorrelated to each other. When channel layer 106 includes both an n-typeimpurity and a p-type impurity, an absolute value of a differencebetween concentrations of the n-type and p-type impurities is referredto as an effective impurity concentration in channel layer 106. In thiscase, a thickness distribution in channel layer 106 and a distributionof an effective concentration of the first conductivity type impurity inchannel layer 106 may be negatively correlated to each other.

FIG. 4A is a graph illustrating a thickness distribution and an impurityconcentration distribution in the channel layer, at a line that passesthrough a center of silicon carbide epitaxial wafer 300 (e.g., line A-Bin FIG. 1). FIG. 4B is a graph illustrating a thickness distribution andan impurity concentration distribution in the channel layer, at a linethat crosses silicon carbide semiconductor device 200 (e.g., line C-D inFIG. 2).

As illustrated in FIG. 4A, within the surface of silicon carbide wafer301, channel layer 106 may have a concentric thickness distribution, inwhich a thickness in a center portion is greater than a thickness in aperipheral portion, as well as channel layer 106 may have a concentricimpurity concentration distribution, in which an impurity concentrationin the center portion is lower than an impurity concentration in theperipheral portion. Although not shown in the drawings, within thesurface of silicon carbide wafer 301, channel layer 106 may have aconcentric thickness distribution, in which a thickness in the centerportion is smaller than a thickness in the peripheral portion, as wellas channel layer 106 may have a concentric impurity concentrationdistribution, in which an impurity concentration in the center portionis greater than an impurity concentration in the peripheral portion. Inchannel layer 106, a thickness distribution and an impurityconcentration distribution may not be concentric. Within the surface ofsilicon carbide wafer 301, at least one direction toward which athickness distribution and an impurity concentration distribution inchannel layer 106 are negatively correlated to each other may otherwisebe present. For example, although not shown in the drawings, channellayer 106 may have a distribution in which an impurity concentrationincreases from an end, i.e., end A, to another end, i.e., end B, as wellas channel layer 106 may have a distribution in which a thicknessincreases from end B to end A.

Similarly, in silicon carbide semiconductor device 200, within thesurface of silicon carbide substrate 101, at least one direction towardwhich a thickness distribution and an impurity concentrationdistribution in channel layer 106 are negatively correlated to eachother may be present. For example, as illustrated in FIG. 4B, channellayer 106 may have a distribution in which a thickness increases from anend, i.e., end C, to another end, i.e., end D, as well as channel layer106 may have a distribution in which an impurity concentration increasesfrom end D to end C.

When a thickness of channel layer 106 becomes small, gate thresholdvoltage Vth increases. When an impurity concentration in channel layer106 becomes high, gate threshold voltage Vth decreases. When an impurityconcentration at one of two points “a” and “b”, whichever is thinner inthickness, is increased, an amount of variation in gate thresholdvoltage Vth due to a variation in thickness between two points “a” and“b” is therefore compensated by an amount of variation due to avariation in impurity concentration between two points “a” and “b.” As aresult, a difference (absolute value) in gate threshold voltage Vthbetween two points “a” and “b” can be reduced.

In silicon carbide epitaxial wafer 300 or silicon carbide semiconductordevice 200 according to the exemplary embodiment as described above, anamount of variation in gate threshold voltage Vth due to a thicknessdistribution in channel layer 106 and an amount of variation in gatethreshold voltage Vth due to an impurity concentration distribution inchannel layer 106 can be compensated each other. Variations in devicecharacteristics due to variations in other factors within the surface ofchannel layer 106 can thus be reduced, improving a yield rate. Under a“compensation” in here, an amount of variation in gate threshold voltageVth due to a thickness distribution in channel layer 106 and an amountof variation in gate threshold voltage Vth due to an impurityconcentration distribution in channel layer 106 may not fully cancel outeach other. Between such parameters, an amount of variation in gatethreshold voltage Vth may compensate another amount of variation in gatethreshold voltage Vth so that a total variation in gate thresholdvoltage Vth can be reduced, as a result.

A thickness of and an impurity concentration in channel layer 106 mayadvantageously be controlled so that silicon carbide semiconductordevice 200 can function as a channel diode. In this case, an impurityconcentration in channel layer 106 is set relatively higher, greatlyaffecting gate threshold voltage Vth. Compensating an amount ofvariation in gate threshold voltage Vth at this time can thereforeresult in a significant effect.

In an ordinary MISFET in which no channel diode is present, an impurityconcentration in a channel layer is below an order of approximately 10¹⁷cm⁻³, and a variation in gate threshold voltage Vth due to a variationin another factor within a surface of the channel layer would be lesslikely to be problematic. For example, Unexamined Japanese PatentPublication No. 2012-94648 discloses a method of reducing a variation ingate threshold voltage Vth due to an impurity distribution in a bodyregion. The disclosure does not however address a variation in gatethreshold voltage Vth due to a variation within a surface of a channellayer. The disclosure does not obviously address how a thickness and animpurity concentration in the channel layer are correlated to eachother. On the other hand, in the exemplary embodiment of the presentapplication, due to its higher impurity concentration in the channellayer, a variation in gate threshold voltage Vth due to an impurityconcentration distribution in the channel layer is greater than avariation in gate threshold voltage Vth due to an impurity concentrationdistribution in the body region. By allowing variations in gatethreshold voltage Vth due to variations in thickness and impurityconcentration in the channel layer to compensate each other, a siliconcarbide semiconductor device in which a variation in gate thresholdvoltage Vth is reduced can be achieved.

<Structure of Channel Layer 106>

Channel layer 106 may be a single n-type or p-type impurity layer. Whenchannel layer 106 is a single impurity layer, a concentration of a firstconductivity type impurity in channel layer 106 may range from 1×10¹⁸cm⁻³ to 1×10¹⁹ cm⁻³, inclusive, and a thickness may range from 10 nm to100 nm, inclusive, for example.

Channel layer 106 may have a multilayered structure. In this case,channel layer 106 may be structured so that an n-type or p-type impuritylayer (hereinafter referred to as “high concentration impurity layer”)and a low concentration impurity layer containing an impurity at aconcentration lower than a concentration of the impurity in the highconcentration impurity layer are multilayered. A concentration of thefirst conductivity type impurity in the high concentration impuritylayer may range from 1×10¹⁸ cm⁻³ to 1×10¹⁹ cm⁻³, inclusive, for example.A “low concentration impurity layer” may be an undoped layer containingsubstantially no impurity. When channel layer 106 has a multilayeredstructure, an in-plane impurity concentration distribution in a highconcentration impurity layer and an in-plane thickness distribution inwhole channel layer 106 may be negatively correlated to each other.

FIG. 3B is an enlarged cross-sectional view of an example of channellayer 106. Channel layer 106 may have a multilayered structure includingbottom layer 161, n-type high concentration impurity layer 160, and caplayer 162, which are laminated in this order from a side near siliconcarbide substrate 101. Here, bottom layer 161 is an n-type, lowconcentration impurity layer or undoped layer, and cap layer 162 is ann-type, low concentration impurity layer or undoped layer, for example.Bottom layer 161 may have a thickness ranging from 5 nm to 40 nm,inclusive. High concentration impurity layer 160 may have a thicknessranging from 10 nm to 40 nm, inclusive. Cap layer 162 may have athickness ranging from 5 nm to 40 nm, inclusive. Total thickness D ofthe layers may range from 20 nm to 100 nm, inclusive, for example. Aconcentration of an n-type impurity in bottom layer 161 may be below1×10¹⁸ cm⁻³. A concentration of the n-type impurity in highconcentration impurity layer 160 may range approximately from 1×10¹⁸cm⁻³ to 1×10¹⁹ cm⁻³, inclusive. A concentration of the n-type impurityin cap layer 162 may be below 1×10¹⁸ cm⁻³. Impurity concentrations inthe layers may not be always even, but may be unevenly distributed inthickness directions of the layers.

Providing cap layer 162 offers benefits as described below. In aproduction step such as sacrificial oxidation and gate oxidation,channel layer 106 might become thinner. At this time, in channel layer106 without having a cap layer, high concentration impurity layer 160becomes thinner in thickness, and a variation in thickness can thuscause variations in electrical properties including a gate thresholdvoltage in the forward direction and a rising voltage in the reversedirection. On the other hand, by forming a low concentration impuritylayer, i.e., cap layer 162, on a surface of high concentration impuritylayer 160, high concentration impurity layer 160, which has highVth-sensitivity, can be prevented from becoming thinner, so thatvariations in electrical properties of a MISFET can be reduced.

Providing bottom layer 161 offers benefits as described below. Whenchannel layer 106 is allowed to epitaxially grow, its growth rate andimpurity concentration might become unstable in an initial growth stage.On the other hand, by not allowing a dopant gas to flow in the initialgrowth stage, an undoped layer or a low concentration impurity layerincluding only background nitrogen is allowed to grow as bottom layer161, and then, after a growth rate becomes stable, high concentrationimpurity layer 160 is allowed to grow. Thus, a variation in impurityconcentration due to the unstable growth rate in the initial growthstage can be reduced.

FIG. 3B illustrates channel layer 106 having a three-layer structure.Alternatively, channel layer 106 may have a two-layer structureincluding bottom layer 161 and high concentration impurity layer 160 orhigh concentration impurity layer 160 and cap layer 162. Channel layer106 may otherwise have a multilayered structure with four or morelayers.

<Relationship Between Thickness Distribution in Channel Layer 106 andThickness Distribution in Gate Insulation Film 107>

In addition to or instead of a correlation (negative correlation)between a thickness distribution and an impurity concentrationdistribution in channel layer 106, the thickness distribution in channellayer 106 and a thickness distribution in gate insulation film 107 maybe positively correlated to each other, within the surface of siliconcarbide wafer 301 or within the surface of silicon carbide substrate 101in silicon carbide semiconductor device 200. The term “positivelycorrelated to each other” herein denotes a case in which, defining twopoints “a” and “b” at which channel layer 106 has different thicknessesin a plane parallel to silicon carbide wafer 301 or silicon carbidesubstrate 101, an equality of Ta>Tb is satisfied when an equality ofDa>Db is satisfied or an equality of Ta<Tb is satisfied when an equalityof Da<Db is satisfied, wherein the thicknesses of channel layer 106 atpoints “a” and “b” are respectively represented by Da and Db andthicknesses of gate insulation film 107 at points “a” and “b” arerespectively represented by Ta and Tb, for example.

When gate insulation film 107 is a thermal oxide film that is formed bythermal oxidizing a surface region of channel layer 106, channel layer106 may be formed so as to satisfy the above described correlation byconsidering reduction of channel layer 106 in the surface region throughthe thermal oxidation.

FIG. 5A is a graph illustrating a thickness distribution in channellayer 106 and a thickness distribution in gate insulation film 107, atthe line that passes through a center of silicon carbide epitaxial wafer300 (e.g., line A-B in FIG. 1). FIG. 5B is a graph illustrating athickness distribution in channel layer 106 and a thickness distributionin gate insulation film 107, at the line that crosses silicon carbidesemiconductor device 200 (e.g., line C-D in FIG. 2).

As illustrated in FIG. 5A, within the surface of silicon carbide wafer301, channel layer 106 and gate insulation film 107 may each have aconcentric thickness distribution, in which a thickness in the centerportion is greater than a thickness in the peripheral portion. Althoughnot shown in the drawings, within the surface of silicon carbide wafer301, channel layer 106 and gate insulation film 107 may have aconcentric thickness distribution, in which a thickness in the centerportion is smaller than the thickness in a peripheral portion. Athickness distribution may not be concentric. Within the surface ofsilicon carbide wafer 301, at least one direction toward which athickness distribution in channel layer 106 and a thickness distributionin gate insulation film 107 are positively correlated to each other maybe present.

Similarly, in silicon carbide semiconductor device 200, as illustratedin FIG. 5B, within the surface of silicon carbide substrate 101, atleast one direction toward which a thickness distribution in channellayer 106 and a thickness distribution in gate insulation film 107 arepositively correlated to each other may be present.

In silicon carbide epitaxial wafer 300 or silicon carbide semiconductordevice 200 according to the exemplary embodiment, an amount of variationin gate threshold voltage Vth due to a thickness distribution in channellayer 106 and an amount of variation in gate threshold voltage Vth dueto a thickness distribution in gate insulation film 107 compensate eachother. Variations in device characteristics due to variations in otherfactors within the surface of channel layer 106 can thus be reduced.

As illustrated in FIG. 6A, within the surface of silicon carbide wafer301, a thickness distribution in channel layer 106 and an impurityconcentration distribution in channel layer 106 may be negativelycorrelated to each other, as well as a thickness distribution in channellayer 106 and a thickness distribution in gate insulation film 107 maybe positively correlated to each other. Similarly, as illustrated inFIG. 6B, within the surface of silicon carbide substrate 101, athickness distribution in channel layer 106 and an impurityconcentration distribution in channel layer 106 may be negativelycorrelated to each other, as well as a thickness distribution in channellayer 106 and a thickness distribution in gate insulation film 107 maybe positively correlated to each other. Therefore, a variation in gatethreshold voltage Vth within the surface of silicon carbide wafer 301 orsilicon carbide substrate 101 can be effectively reduced.

(Amount of Variation Occurring in Steps for Producing MISFET andSensitivity to Gate Threshold Voltage Vth)

The inventor of the present disclosure has estimated how degree gatethreshold voltage Vth will be affected by an amount of variationoccurring in steps for producing a MISFET. The estimation result willnow be described herein.

In production steps of a MISFET, a thickness of channel layer 106, animpurity concentration in channel layer 106, a thickness of gateinsulation film 107, an impurity concentration in body region 103, andchannel length L could vary within the surface of silicon carbideepitaxial wafer 300, for example. Such variations could cause gatethreshold voltage Vth to vary. For these factors, an amount of variationand sensitivity to gate threshold voltage Vth (Vth sensitivity) arecalculated. Results are shown in Table 1. The term “Vth sensitivity”herein denotes an amount of change in a positive or negative directionof gate threshold voltage Vth with respect to a unit amount ofvariation. For example, Vth sensitivity to a thickness of channel layer106 is −0.15 V. This means that, when a thickness of channel layer 106increases (or decreases) by 1 nm, for example, gate threshold voltageVth changes by 0.15 V in the negative direction, i.e., decreases (orincreases) by 0.15 V. By using the amount of variation and the Vthsensitivity, amounts of variations in gate threshold voltage Vth due tofactors and a total of the amounts of variations in gate thresholdvoltage Vth due to the factors (total amount of variation in Vth) areobtained and shown in Table 1.

As can be understood from Table 1, main factors that have caused gatethreshold voltage Vth to vary are a varied thickness of channel layer106, a varied impurity concentration in channel layer 106, and a variedthickness of gate insulation film 107. By allowing the amounts ofvariations in gate threshold voltage Vth due to the factors tocompensate each other, a total amount of variation in Vth can besignificantly reduced.

For example, by allowing an amount of variation in gate thresholdvoltage Vth due to a varied thickness of channel layer 106 to becompensated with an amount of variation in gate threshold voltage Vthdue to a varied impurity concentration in channel layer 106, a totalamount of variation in Vth can be reduced from ±1.1 V to ±0.5 V, asillustrated in Table 1.

A thickness distribution in gate insulation film 107 may further becontrolled so as to be positively correlated to a thickness distributionin channel layer 106. An amount of variation in gate threshold voltageVth due to a varied thickness of channel layer 106 can therefore becompensated with an amount of variation in gate threshold voltage Vthdue to a varied impurity concentration in channel layer 106 and a variedthickness of gate insulation film 107. As illustrated in Table 1, thetotal amount of variation in Vth can therefore be reduced to ±0.35 V.

According to a result of the estimation, it can be confirmed that atotal amount of variation in Vth is reduced by controlling adistribution of a varied thickness or concentration amount that couldoccur in steps for producing.

TABLE 1 Amount of Amount of Sensitivity variation variation to Vth inVth Thickness of ±4 nm −0.15 V/nm  ±0.60 V channel layer Impurity ±3 ×10¹⁷  −1 × 10⁻¹⁸ ±0.30 V concentration in cm⁻³ V/cm⁻³ channel layerThickness of gate ±3 nm 0.05 V/nm ±0.15 V insulation film Impurity ±6 ×10¹⁷ 5.8 × 10⁻²⁰ ±0.035 V  concentration in cm⁻³ V/cm⁻³ body regionChannel length ±0.05 μm   0.06 V/μm ±0.003 V  Total amount of variationin Vth  ±1.1 V Total amount of variation in Vth when amounts  ±0.5 V ofvariation in Vth in thickness of and impurity concentration in channellayer are compensated Total amount of variation in Vth when amounts±0.35 V of variation in Vth in thickness of and impurity concentrationin channel layer and thickness of gate insulation film are compensated

<Method of Producing Silicon Carbide Semiconductor Devices 200>

Next, a method of producing silicon carbide semiconductor devices 200,according to the exemplary embodiment, will now be described herein withreference to the accompanying drawings.

FIGS. 7A to 7F are cross-sectional views explaining the method ofproducing silicon carbide semiconductor devices 200, respectively. FIG.7A illustrates a part of silicon carbide epitaxial wafer 300. FIGS. 7Bto 7F illustrate single unit cell forming region Ru in silicon carbideepitaxial wafer 300, respectively.

Firstly, as illustrated in FIG. 7A, first conductivity type (n-type)silicon carbide epitaxial layer 110 is allowed to epitaxially grow onthe main surface of silicon carbide wafer 301 to obtain silicon carbideepitaxial wafer 300.

As silicon carbide wafer 301, for example, an off-cut substrate in whicha 4H—SiC (0001) surface is shifted four degrees in a [11-20] directionis used. Silicon carbide wafer 301 has a diameter of 75 mm, for example.Silicon carbide wafer 301 is n-type. Silicon carbide wafer 301 has animpurity concentration ranging approximately from 5×10¹⁸ cm⁻³ to 1×10¹⁹cm⁻³, inclusive, for example.

Before allowing silicon carbide epitaxial layer 110 to epitaxially growin a forming process, silicon carbide wafer 301 is heated. In thisheating process, no source gas is supplied, but silicon carbide wafer301 is heated under an atmosphere filled with at least hydrogen. At thetime when silicon carbide wafer 301 is heated to a predetermined growthtemperature (wafer temperature, 1600° C. in here), a source gas and adopant gas of nitrogen are supplied. As described above, silicon carbideepitaxial layer 110 is formed on the main surface of silicon carbidewafer 301 in a thickness ranging approximately from 5 μm to 100 μm,inclusive (e.g., 10 μm), for example. Silicon carbide epitaxial layer110 has an n-type impurity concentration ranging from 1×10¹⁴ cm⁻³ to1×10¹⁷ cm⁻³, inclusive (e.g., 1×10¹⁶ cm⁻³), for example, which is setlower than an n-type impurity concentration in silicon carbide wafer301.

Next, as illustrated in FIG. 7B, within unit cell forming region Ru,p-type or n-type impurity ions are implanted into a selected region ofsilicon carbide epitaxial layer 110 to form body region 103, sourceregion 104, and contact region 105.

Specifically, on silicon carbide epitaxial layer 110, a mask made ofSiO₂ (not shown) is formed, for example, and then p-type impurity ions(e.g., Al ions or B ions) are implanted into a region where no mask isformed so as to form body region 103. Body region 103 has a widthranging from 5 μm to 10 μm, inclusive, for example. A concentration of ap-type impurity in body region 103 ranges from 1×10¹⁷ cm⁻³ to 1×10²⁰cm⁻³, inclusive, for example.

N-type impurity ions (e.g., nitrogen ions) are further implanted intocontact region 105 so as to form source region 104. A concentration ofan n-type impurity in source region 104 ranges from 1×10¹⁸ cm⁻³ to1×10²¹ cm⁻³, inclusive, for example.

Within body region 103, p-type impurity ions are implanted so as to formcontact region 105. A concentration of a p-type impurity in contactregion 105 ranges from 1×10¹⁹ cm⁻³ to 1×10²¹ cm⁻³, inclusive, forexample.

After the ions are implanted, the mask is removed, and then activatingannealing is performed. For example, activation annealing is performedat a temperature of approximately 1700° C. under an inert atmosphere forapproximately 30 minutes.

Next, as illustrated in FIG. 7C, channel layer 106 is formed throughepitaxial growth over the surface of silicon carbide epitaxial layer 110including body region 103, source region 104, and contact region 105. Inthe exemplary embodiment, nitrogen is supplied as the dopant gas to formchannel layer 106. An average concentration in channel layer 106 rangesapproximately from 1×10¹⁸ cm⁻³ to 1×10¹⁹ cm⁻³, inclusive, for example.An average thickness of channel layer 106 ranges from 20 nm to 100 nminclusive, for example.

In the exemplary embodiment, by controlling a condition for epitaxialgrowth for channel layer 106, channel layer 106 is intentionally causedto have a predetermined in-plane distribution in thickness and/orconcentration. The condition for epitaxial growth includes parameters,such as amount of source gas to be supplied, supply rate of source gas,growth pressure, and growth temperature.

A thickness distribution in channel layer 106 can be controlled by agrowth temperature, a growth pressure, and a gas flow amount, forexample. For example, when a higher growth temperature is set (e.g., ina range more than 1500° C. and equal to or less than 1600° C.), athickness of channel layer 106 can be made smaller in the center portionof silicon carbide wafer 301 than a thickness of channel layer 106 inthe peripheral portion of silicon carbide wafer 301 (centerportion<peripheral portion). On the other hand, when a lower growthtemperature is set (e.g., in a range from 1400° C. to 1500° C.,inclusive), a thickness of channel layer 106 can be made greater in thecenter portion of silicon carbide wafer 301 than a thickness of channellayer 106 in the peripheral portion of silicon carbide wafer 301 (centerportion>peripheral portion). As an assumed mechanism of why a thicknessdistribution changes in channel layer 106 is that, when a growthtemperature, a growth pressure, or a gas flow amount is changed, atemperature distribution or a gas flow rate changes in an epitaxialgrowth furnace, and a profile in which a source gas is thermallydecomposed from upstream to downstream in the epitaxial growth furnaceis thus further changed, for example. An impurity concentrationdistribution in channel layer 106 on a surface of a wafer can becontrolled by changing a flow amount of a source gas and an atomic ratiobetween carbon and silicon contained in the source gas (C/Si ratio), aswell as by changing a temperature distribution within the surface of thewafer, for example. For example, when a higher C/Si ratio is set (e.g.,in a range from 1.6 to 2.2, inclusive), an impurity concentration inchannel layer 106 in the center portion of silicon carbide wafer 301 canbe made higher than an impurity concentration in channel layer 106 inthe peripheral portion of silicon carbide wafer 301 (centerportion>peripheral portion). On the other hand, when a lower C/Si ratiois set (e.g., in a range from 1.0 to 1.6, inclusive), an impurityconcentration in channel layer 106 can be made lower in the centerportion of silicon carbide wafer 301 than an impurity concentration inchannel layer 106 in the peripheral portion of silicon carbide wafer 301(center portion<peripheral portion). It is known, through experiments,that impurity concentration is highly susceptible to wafer temperaturethan film thickness. An impurity distribution is thus affected by awafer temperature distribution. As an assumed mechanism of why animpurity distribution changes is that, when an effective C/Si ratiochanges within a surface of a wafer due to a balance among a temperaturedistribution within the surface of the wafer, a flow amount of a sourcegas, and a C/Si ratio, an impurity concentration in a center portionbecomes higher or lower than an impurity concentration in a peripheralportion.

Next, as illustrated in FIG. 7D, for example, a surface portion ofchannel layer 106 is thermally oxidized so as to form gate insulationfilm 107 on silicon carbide epitaxial layer 110. Gate insulation film107 may be an oxide film, an oxynitride film, or a film multilayeredwith an oxide film and an oxynitride film. In here, as gate insulationfilm 107, for example, the surface of silicon carbide epitaxial layer110 is thermally oxidized under a temperature ranging from 1100° C. to1400° C., inclusive so as to form a thermal oxide (SiO₂) film. Gateinsulation film 107 has a thickness ranging from 40 nm to 80 nm,inclusive, for example. Instead of a thermal oxide film, a SiO₂ film maybe formed through a CVD method on silicon carbide epitaxial layer 110.

When a thermal oxide film is to be formed as gate insulation film 107, athickness distribution in gate insulation film 107 can be controlled byusing an oxygen concentration distribution around a wafer, for example.For example, in an oxidizing furnace for multiple charging, in which aplurality of wafers are arranged on a carrier for substrate so that twoadjacent wafers face each other at a constant gap, when a gas (e.g.,oxygen, nitrogen, or argon) is not fully supplied in amount, the gasflow stagnates. In this case, oxygen would be less likely to reacharound a wafer center, meanwhile oxygen would be likely to reach arounda wafer peripheral portion. Thus, an oxygen concentration lowers aroundthe wafer center, resulting in thinner gate insulation film 107 in thewafer center (center portion<peripheral portion). On the other hand,when the gas is fully supplied in amount (e.g., oxygen, nitrogen, orargon), such an event that oxygen would be less likely to reach aroundthe wafer center, as described above, can be suppressed. However, aroundthe wafer peripheral portion, the oxygen is consumed by the carrier forsubstrate, resulting in thinner gate insulation film 107 in the waferperipheral portion (center portion>peripheral portion). A thicknessdistribution in gate insulation film 107 can be controlled by changing astructure of a carrier onto which a wafer is placed so as to control atemperature distribution in a surface of a wafer.

Next, as illustrated in FIG. 7E, gate electrode 108 is formed on gateinsulation film 107. Gate electrode 108 can be formed by using a lowpressure chemical vapor deposition (LPCVD) apparatus to depositpolysilicon (poly-Si film) doped with phosphorus on gate insulation film107, for example.

Next, as illustrated in FIG. 7F, source electrode 109 and drainelectrode 114 are formed.

Firstly, interlayer insulating layer 111 is allowed to deposit throughthe CVD method so as to cover gate electrode 108, for example.Interlayer insulating layer 111 may be made of SiO₂. After that, anopening for a source electrode is formed in interlayer insulating layer111. Next, source electrode 109 is formed in the opening of interlayerinsulating layer 111. In here, for example, a nickel film having athickness ranging from approximately 50 nm to approximately 100 nminclusive is first formed in the opening, and then heat treatment isperformed under an inert atmosphere for five minutes at a temperature of950° C. so as to allow nickel and a surface of silicon carbide to reacteach other. Thus, source electrode 109 made of nickel silicide isformed. Source electrode 109 forms an ohmic contact with a part ofsource region 104 and contact region 105. Drain electrode 114 is formedon the back surface of silicon carbide substrate 101. For example,titanium is deposited to a thickness of approximately 150 nm on the backsurface of silicon carbide substrate 101, and then, the heat treatmentwhich is similar to the above is performed so as to allow the titaniumand a surface of silicon carbide to react each other. Thus, drainelectrode 114 made of titanium silicide is formed. Drain electrode 114forms an ohmic contact with silicon carbide substrate 101. After that,on interlayer insulating layer 111 and in the opening of interlayerinsulating layer 111, source wire 112 is formed so as to be in contactwith source electrode 109 in the opening.

With the above described process, device structures including theplurality of unit cells 100 are formed in device regions of siliconcarbide epitaxial wafer 300. Although not shown in the drawings, afterthat, silicon carbide epitaxial wafer 300 is cut into devices (chips). Aplurality of silicon carbide semiconductor devices (MISFET) 200 can betherefore obtained.

In the exemplary embodiment, channel layer 106 is intentionally causedto have predetermined distributions in thickness and impurityconcentration, as well as gate insulation film 107 is intentionallycaused to have a predetermined distribution in thickness. A differencebetween a maximum value and a minimum value in each distribution of suchparameters may be adjusted so that a variation in gate threshold voltageVth can effectively be reduced.

Within the surface of silicon carbide wafer 301, a difference between amaximum value and a minimum value in the thickness distribution inchannel layer 106 may range from 2 nm to 20 nm, inclusive, for example,while a difference between a maximum value and a minimum value in aconcentration distribution of the first conductivity type impurity inchannel layer 106 may range from 2×10¹⁷ cm⁻³ to 2×10¹⁸ cm⁻³, inclusive,for example. Therefore, a variation in Vth can further effectively bereduced. A thickness distribution, for example, in each of the deviceregions becomes smaller than the above described thickness distributionin whole silicon carbide wafer 301, for example. For example, within thesurface of silicon carbide substrate 101, a difference between a maximumvalue and a minimum value in the thickness distribution in channel layer106 may range from 1 nm to 5 nm, inclusive, while a difference between amaximum value and a minimum value in a concentration distribution of thefirst conductivity type impurity in channel layer 106 may range from1×10¹⁷ cm⁻³ to 1×10¹⁸ cm⁻³, inclusive. Variations in gate thresholdvoltage Vth among unit cells in silicon carbide semiconductor device 200can therefore be kept equal to or below ±0.5 V, for example. Adifference between a maximum value and a minimum value in a thicknessdistribution in channel layer 106 may advantageously range from 1 nm to2 nm, inclusive, while a difference between a maximum value and aminimum value in a concentration distribution of the first conductivitytype impurity in channel layer 106 may advantageously range from 1×10¹⁷cm⁻³ to 2×10¹⁷ cm⁻³, inclusive. Variations in gate threshold voltage Vthamong unit cells in silicon carbide semiconductor device 200 cantherefore be kept equal to or below ±0.3 V, for example.

Example and Comparative Example

MISFETs according to an example and a comparative example are produced,and variations in device characteristics within surfaces of siliconcarbide wafers 301 are measured. The methods and results are describedbelow.

As the example, a plurality of MISFETs are produced on silicon carbidewafer 301 having a diameter of 75 mm (3 inches). For the producedMISFETs, a p-type impurity concentration in body region 103 is set to2×10¹⁹ cm⁻³, a thickness of gate insulation film 107 is set to 70 nm,and a channel length is set to 0.5 μm. As channel layer 106, amultilayered channel layer multilayered with a bottom layer, a highconcentration impurity layer, and a cap layer in order from a substrateis formed. An average concentration of an n-type impurity in the highconcentration impurity layer is set to 1.2×10¹⁸ cm⁻³, while a thicknessis set to 20 nm. The bottom layer is set to be an undoped layer having athickness of 17 nm, and the cap layer is set to be an undoped layerhaving a thickness of 20 nm. A total average thickness of the layers inchannel layer 106 is set to 57 nm. In epitaxial grow of channel layer106, a growth temperature is set to 1470° C., a growth pressure is setto 200 hPa, and a supply ratio (C/Si ratio) of a source gas is set to1.2.

As the comparative example, a plurality of MISFETs are produced onsilicon carbide wafer 301 with the method used when the example isproduced, except that a growth temperature for channel layer 106 of1550° C.

Next, thickness distributions and impurity concentration distributionsin channel layers 106 within surfaces of silicon carbide epitaxialwafers 300 according to the example and the comparative example aremeasured. Here, in a cross-section that passes through a center of eachof silicon carbide epitaxial wafers 300, thicknesses and impurityconcentrations are measured at five points (p1 to p5) from one side ofthe periphery to another side of the periphery, and then distributionsare obtained. Measurement points p1, p5 are positioned at a peripheralportion of silicon carbide epitaxial wafer 300, while measurement pointp3 is positioned at a central portion of silicon carbide epitaxial wafer300. For the plurality of MISFETs according to the example and thecomparative example, gate threshold voltage Vth is measured when anON-current is 1 mA, as well as ON-resistance Ron is measured when anON-current is 50 A.

FIG. 8A is a graph showing a result of measurement on the thicknessdistribution and the impurity concentration distribution in channellayer 106 according to the comparative example, and FIG. 8B is a graphshowing variations in gate threshold voltage Vth and ON-resistance Ronin the plurality of MISFETs according to the comparative example. FIG.9A is a graph showing a result of measurement on the thicknessdistribution and the impurity concentration distribution in channellayer 106 according to the example, and FIG. 9B is a graph showingvariations in gate threshold voltage Vth and ON-resistance Ron in theplurality of MISFETs according to the example.

In the comparative example, as illustrated in FIG. 8A, an impurityconcentration in channel layer 106 in a center portion of siliconcarbide epitaxial wafer 300 is lower than an impurity concentration inchannel layer 106 in the peripheral portion of silicon carbide epitaxialwafer 300, while a thickness of channel layer 106 in the center portionof silicon carbide epitaxial wafer 300 is smaller than a thickness ofchannel layer 106 in the peripheral portion of silicon carbide epitaxialwafer 300. In other words, the impurity concentration distribution andthe thickness distribution in channel layer 106 are positivelycorrelated to each other. A variation in the impurity concentration is±20% (±2×10¹⁷ cm⁻³), and a difference between a maximum value and aminimum value of the impurity concentration is 4×10¹⁷ cm⁻³. A variationin the thickness of channel layer 106 is ±5% (±3 nm), and a differencebetween a maximum value and a minimum value of the thickness is 6 nm. Inthe comparative example, as illustrated in FIG. 8B, it can be understoodthat gate threshold voltage Vth and ON-resistance Ron greatly vary amongMISFETs formed on silicon carbide epitaxial wafer 300. For example, avariation in gate threshold voltage Vth is 1.5 V or more. This can beassumed that, since the impurity concentration distribution and thethickness distribution in channel layer 106 are positively correlated toeach other, amounts of variation in Vth due to the thicknessdistribution and the impurity concentration distribution in channellayer 106 are added, and as a result, the amount of variation in Vth isincreased.

On the other hand, in the example, as illustrated in FIG. 9A, though animpurity concentration in channel layer 106 is approximately identicalto the impurity concentration observed in the comparative example, athickness of channel layer 106 in the center portion of silicon carbideepitaxial wafer 300 is greater than a thickness of channel layer 106 inthe peripheral portion of silicon carbide epitaxial wafer 300. In otherwords, the impurity concentration distribution and the thicknessdistribution in channel layer 106 are negatively correlated to eachother. A variation in the impurity concentration is ±20% (±2×10¹⁷ cm⁻³),a difference between a maximum value and a minimum value of the impurityconcentration is 4×10¹⁷ cm⁻³, an amount of variation in the thickness ofchannel layer 106 is ±5% (±3 nm), and a difference between a maximumvalue and a minimum value of the thickness is 6 nm. All values describedabove are identical to the values observed in the comparative example.In the example, as illustrated in FIG. 9B, it can be understood thatvariations in gate threshold voltage Vth and ON-resistance Ron aresignificantly reduced, compared with the comparative example. In theexample, a variation in gate threshold voltage Vth is approximately 0.5V. This can be assumed that, since the impurity concentrationdistribution and the thickness distribution in channel layer 106 arenegatively correlated to each other, an amount of variation in Vth dueto the thickness distribution in channel layer 106 is compensated by anamount of variation in Vth due to the impurity concentrationdistribution, and as a result, the amount of variation in Vth isreduced.

It can be therefore confirmed that, by controlling an impurityconcentration distribution and a thickness distribution in channel layer106, a variation in Vth within a surface of silicon carbide wafer 301can be reduced.

As described above, a thickness distribution in gate insulation film 107may be controlled so as to be positively correlated to a thicknessdistribution in channel layer 106. For example, channel layer 106 andgate insulation film 107 may both be formed to have a greater thicknessin the center portion than a thickness in the peripheral portion. Anamount of variation in Vth due to a variation in thickness of channellayer 106 can be therefore compensated by both amount of variation inVth due to a variation in impurity concentration in channel layer 106and amount of variation in Vth due to a variation in thickness of gateinsulation film 107, a total amount of variation in Vth can thus furtherbe reduced.

A silicon carbide semiconductor device according to the exemplaryembodiment is not limited to a planar-structured vertical MISFET, butmay be a trench-structured vertical MISFET. A silicon carbidesemiconductor device may otherwise be a horizontal MISFET in which asource electrode and a drain electrode are disposed on a main surface ofa silicon carbide wafer. A silicon carbide semiconductor device mayotherwise be a junction field effect transistor (JFET), for example. Asilicon carbide wafer having a conductivity type that differs from aconductivity type of silicon carbide epitaxial layer 110 may be used toproduce an insulated gate bipolar transistor (IGBT).

In addition to silicon carbide, a semiconductor epitaxial wafer and asemiconductor device made of another wide bandgap semiconductor, such asgallium nitride (GaN), gallium oxide (Ga₂O₃), and diamond, are alsoapplicable. A semiconductor epitaxial wafer and a semiconductor devicemade of silicon are also applicable.

The technology disclosed in the present specification is useful for, forexample, use of a semiconductor device used for a power converter. Inparticular, it is useful for use of a power semiconductor device to beinstalled on an on-vehicle power converter, a power converter forindustrial equipment, or the like.

What is claimed is:
 1. A method of producing a semiconductor device, themethod comprising steps of: (A) preparing a semiconductor epitaxialwafer which includes a semiconductor wafer, and a semiconductor layerdisposed on a main surface of the semiconductor wafer, the semiconductorlayer containing a first conductivity type impurity, the semiconductorepitaxial wafer including a plurality of device regions, each of whichincludes a body region of a second conductivity type in contact with thesemiconductor layer, and a source region of the first conductivity typein contact with the body region; and (B) forming a channel layer whichis in contact with at least a part of the body region by epitaxialgrowth of a semiconductor on a surface of the semiconductor layer,wherein: the channel layer contains the first conductivity type impurityat a concentration ranging from 1×10¹⁸ cm⁻³ to 1×10¹⁹ cm⁻³, inclusive,and has a thickness ranging from 10 nm to 100 nm, inclusive, and in thestep (B), a condition for the epitaxial growth is controlled so that, ina plane parallel to the main surface of the semiconductor wafer, athickness distribution in the channel layer and a concentrationdistribution of the first conductivity type impurity in the channellayer are negatively correlated to each other.
 2. The method accordingto claim 1, further comprising a step of (C) forming a gate insulationfilm on the channel layer, wherein, in the steps of (B) and (C), thecondition for the epitaxial growth and a condition for forming the gateinsulation film are controlled so that, in the plane parallel to themain surface of the semiconductor wafer, the thickness distribution inthe channel layer and a thickness distribution in the gate insulationfilm are positively correlated to each other.
 3. The method according toclaim 1, wherein the semiconductor wafer is a silicon carbide wafer, thesemiconductor layer is a silicon carbide semiconductor layer, and thechannel layer is constituted by a silicon carbide semiconductor.
 4. Amethod of producing a semiconductor device, the method comprising stepsof: (A) preparing a semiconductor epitaxial wafer which includes asemiconductor wafer, and a semiconductor layer disposed on a mainsurface of the semiconductor wafer, the semiconductor layer containing afirst conductivity type impurity, the semiconductor epitaxial waferincluding a plurality of device regions, each of which includes a bodyregion of a second conductivity type in contact with the semiconductorlayer, and a source region of the first conductivity type in contactwith the body region; (B) forming a channel layer which is in contactwith at least a part of the body region by epitaxial growth of asemiconductor on a surface of the semiconductor layer; and (C) forming agate insulation film on the channel layer, wherein: the channel layercontains the first conductivity type impurity at a concentration rangingfrom 1×10¹⁸ cm⁻³ to 1×10¹⁹ cm⁻³, inclusive, and has a thickness rangingfrom 10 nm to 100 nm, inclusive, and in the steps of (B) and (C), acondition for the epitaxial growth and a condition for forming the gateinsulation film are controlled so that, in a plane parallel to the mainsurface of the semiconductor wafer, a thickness distribution in thechannel layer and a thickness distribution in the gate insulation filmare positively correlated to each other.
 5. The method according toclaim 4, wherein the semiconductor wafer is a silicon carbide wafer, thesemiconductor layer is a silicon carbide semiconductor layer, and thechannel layer is constituted by a silicon carbide semiconductor.